The High Selectivity Kit optimizes the use of the chuck LF Power (low frequency) in order to reduce the mask comsuption without affecting the silicon etching rate : the ion bombardment is limited to the polymer removal (see graph). The selectivity is therefore increased by a factor x1.5 to x2 for any applications with SF6 pulses longer than 3 seconds.

The kit is based on a chuck generator equipped with the Device Net capability.

Also, the requested new software version improves the versatility of the recipe edition:
·          the number of pulses is no more limited to the number of gas lines
·          every combination of gas mixture is possible in a pulse
·          the setting of the pulse parameters is independent: gas mixture, gas flow, chamber pressure, source and chuck powers, LF frequency.