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OES Endpoint Detection

The new AMMS optical emission spectroscopy (OES) endpoint solution allows a complete and robust monitoring of the process by an in situ real time analysis of the full plasma spectra. DRIE chamber plasma conditions can be monitored as well as production wafers


·          In situ full spectra plasma analysis (200-800nm)
·          Multiple detection algorithm
·          Wafer to wafer monitoring and  statistical analysis
·          Digital and Ethernet communication with Alcatel etcher
·          Available for AMS100, AMS110, AMS200, AMS4200, AMS3200
·          Bosch process compatible, synchronized signal acquisition on SF6 gas pulse

·Multiple applications and monitoring:
        o    SOI waferso    Through the wafer etching on membranes
        o    Dielectric etching
        o    Photoresist stripping monitoring
        o    Plasma chemistry monitoring and analysis
 
 
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